2sa1213 transistor (pnp) features power dissipation p cm : 0.5 w (tamb=25 ) collector current i cm : -2 a collector-base voltage v (br)cbo : -50 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic=-100 a , i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c = -10ma , i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-50 v , i e =0 -0.1 a emitter cut-off current i ebo v eb =-5 v , i c =0 -0.1 a h fe 1 v ce =-2v, i c = -0.5a 70 240 dc current gain h fe 2 v ce =-2v, i c = -2a 20 collector-emitter saturation voltage v cesat i c =-1a, i b = -0.05a -0.5 v base-emitter saturation voltage v besat i c =-1a, i b = -0.05a -1.2 v transition frequency f t v ce = -2v, i c =-0.5a 100 mhz classification of h fe rank o y range 70-140 120-240 marking no,ny sot-89 1. base 2. collector 3. emitter 1 2 3 2s a1213 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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